HAH1BV S/02

AUTOMOTIVE CURRENT TRANSDUCER HAH1BV S/02 Introduction Principle of HAH1BV Family The HAH1BV family is for the electronic measurement of DC, AC or pulsed currents in high power automotive applications with galvanic isolation between the primary circuit (high power) and the secondary circuit (electronic circuit). The HAH1BV family gives you the choice of having different current measuring ranges in the same housing (from ± 200 A up to ± 900 A). Features The open loop transducers use an Hall effect integrated circuit. The magnetic flux density B, contributing to the rise of the Hall voltage, is generated by the primary current IP to be measured. The current to be measured IP is supplied by a current source i.e. battery or generator (Fig. 1). Within the linear region of the hysteresis cycle, B is proportional to: B (IP) = constant (a) x IP ●● Open Loop transducer using the Hall effect ●● Unipolar + 5 V DC power supply ●● Primary current measuring range up to ± 500 A ●● Maximum rms primary current limited by the busbar, the magnetic core or the ASIC temperature T° < + 150°C ●● Operating temperature range: - 40°C < T° < + 125°C ●● Output voltage: full ratiometric (in sensitivity and offset) ●● Compact design. The Hall voltage is thus expressed by: VH= (RH/d) x I x constant (a) x IP Except for IP, all terms of this equation are constant. Therefore: VH = constant (b) x IP The measurement signal VH amplified to supply the user output voltage or current. Advantages ●● Excellent accuracy +Vc ●● Very good linearity ●● Very low thermal offset drift ●● Very low thermal sensitivity drift IP Vout ●● Wide frequency bandwidth -Vc ●● No insertion losses. 0V Automotive applications ●● ●● ●● ●● ●● Battery monitoring Starter Generators Inverters HEV application EV application. Primary current I P Isolated output voltage Fig. 1: Principle of the open loop transducer Page 1/5 091008/0 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1BV S/02 Dimensions HAH1BV family (in mm. 1mm = 0.0394 inch) Bottom view Right view Front view System architecture (example) Bill of materials ●● Plastic case PBT GF 30 ●● Magnetic core Iron silicon alloy ●● Pins Brass tin plated Mass Remarks ●● VOUT > 39 g VC when IP flows in the direction of the arrow. 2 RL > 10 kW optional resistor for signal line diagnostic VOUT Diagnosis Open circuit VIN = VC Short GND VIN = OV CL < 100 nF EMC protection RC Low pass filter EMC protection (optional) System architecture Page 2/5 091008/0 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1BV S/02 Absolute maximum ratings Symbol Unit Specification Min Typ Conditions Max Electrical Data Maximum primary current peak IPmax A VC V 1) Supply continuous over voltage Supply over voltage 8.5 Reverse voltage 14 VOUT V IOUT mA Output short-circuit duration Tc min Rms voltage for AC isolation test Vd kV Isolation resistance RIS MΩ Electrostatic discharge voltage VESD kV TS °C Symbol Unit IP A -500 Calibration current ICAL A -500 Supply voltage VC V 4.5 Output voltage VOUT V VOUT = (VC/5) X (2.5 + G X IP) G mV/A 4 mA 7 Output over voltage (continuous) 8.5 Output over voltage Continuous output current Ambient storage temperature 1 min 1 min @ TA = 25°C -14 14 -10 1 min @ TA = 25°C 10 2 2 500 50 Hz, 1 min 500 V - ISO 16750-2 2 -40 JESD22-A114-B 125 Operating characteristics Specification Min Typ Conditions Max Electrical Data Primary current Sensitivity 2) Current consumption Power up inrush current Load resistance IC RL ΚΩ @ TA = 25°C 5.5 @ VC @ VC = 5 V 10 @ VC = 5 V, - 40°C < TA < 125°C 15 @ VC < 3.5 V 10 ROUT Ω CL nF 1 Ambient operating temperature TA °C -40 % -1 Output drift versus power supply 500 5.00 mA Capacitive loading Output internal resistance 500 10 100 125 0.3 1 Performance Data Sensitivity error εG % Electrical offset current IOE A ±1 Magnetic offset current IOM A ± 1.2 Globale offset current Average temperature coefficient of VOE Average temperature coefficient of G -1.0 ± 0.5 1.0 @ TA = 25°C, ‘@ VC = 5 V @ TA = 25°C, ‘@ VC = 5 V @ TA = 25°C, ‘@ VC = 5 V after ± IP ± 2.2 IO A TCVOE AV mV/°C -0.06 ± 0.02 0.06 @ - 40°C < TA < 125°C TCG AV %/°C -0.04 ± 0.02 0.04 @ - 40°C < TA < 125°C -1.0 1.0 of full range - 3.8 3.8 @ TA= 25°C Linearity error εL % Response time to 90 % of IPN step tr ms 5 @ di/dt = 50 A/µs Frequency bandwidth BW Hz 80 @ -3 dB Output clamping min voltage Vsz V 0.24 0.25 0.26 @ VC = 5 V Output clamping max voltage Vsz V 4.74 4.75 4.76 @ VC = 5 V Vno pp mV Output voltage noise peak peak -----6- 10 Resolution mV 2.5 Power up time ms 25 Setting time after overload ms @ VC = 5 V 100 25 Notes: 1) Busbar temperature must be below 150°C. 2) The output voltage VOUT is fully ratiometric. The offset and sensitivity are dependent on the supply voltage VC relative to the following formula: VC  1 5  IP   VOUT    G V 2 C   with G in ( V / A ) Page 3/5 091008/0 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1BV S/02 HAH1BV S/02 Gain Error (%) HAH1BV S/02 Electrical offset Error (A) 5 3 4 2 3 2 1 1 0 0 -1 -1 -2 -3 -2 -4 -5 -40 -20 0 20 40 60 80 100 -3 -40 120 0 20 40 60 80 100 120 HAH1BV S/02 Phase HAH1BV S/02 Frequency Bandwith 0 0 -1 -10 -20 -2 -30 Phase (°) -3 Gain (dB) -20 Temperature (°C) Temperature (°C) -4 -5 -40 -50 -60 -6 -70 -80 -7 -90 -8 10 100 1000 10 100 1000 Frequency (Hz) Frequency (Hz) Typical Response Time (ms) di/dt = 100A/us 120 100 Ip (A) 80 60 40 20 0 -5 0 5 10 15 20 25 30 Time (ms) Page 4/5 091008/0 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com HAH1BV S/02 PERFORMANCES PARAMETERS DEFINITIONS Sensitivity: Output noise voltage: The output voltage noise is the result of the noise floor of the The Transducer’s sensitivity G is the slope of the straight line Vout = f (IP), it must establish the relation: Hall elements and the linear IC amplifier gain. Vout (IP) = VC/5 (G x IP + 2.5) (*) Magnetic offset: (*) For all symetrics transducers. The magnetic offset is the consequence of an over-current on Offset with temperature: the primary side. It’s defined after an excursion of IP max. The error of the offset in the operating temperature is the variation Linearity: of the offset in the temperature considered with the initial offset The maximum positive or negative discrepancy with a reference at 25°C. straight line VOUT = f (IP). The offset variation IOT is a maximum variation the offset in the Unit: linearity (%) expressed with full scale of IP max. temperature range: Linearity is measured on cycle + IP, O, - IP, O, + IP without IOT = IOE max - IOE min magnetic offset (average values used) The Offset drift TCIOEAV is the IOT value divided by the temperature range. VOUT Non linearity example Reference straight line Max linearity error IP Linearity variation in IN % Sensitivity with temperature: The error of the sensitivity in the operating temperature is the relative variation of sensitivity with the temperature considered with the initial offset at 25°C. The sensitivity variation GT is the maximum variation (in ppm or %) of the sensitivity in the temperature range: GT = (Sensitivity max - Sensitivity min) / Sensitivity at 25°C. The sensitivity drift TCGAV is the GT value divided by the temperature range. Offset voltage @ IP = 0 A: Is the output voltage when the primary current is null. The ideal value of VO is VC/2 at VC = 5 V. So, the difference of VO -VC/2 is called the total offset voltage error. This offset error can be Response time (delay time) tr: The time between the primary current signal and the output attributed to the electrical offset (due to the resolution of the ASIC quiescent voltage trimming), the magnetic offset, the thermal drift signal reach at 90 % of its final value and the thermal hysteresis. I [A] Environmental test specifications IT 90 % IS IP Name Standard Damp heat, steady state JESD22-A101 Isolation resistance tr ISO 16750-2 § 4.10 Conditions 85°C - 85°C / 1000h 500 V/1min Temperature humidity cycle test ISO 16750-4 -10 + 85°C 10 days Isolation test IEC 60664-1 2 kV/50 Hz/1min Mechanical tests Vibration test (random) t [µs] Typical: Theorical value or usual accuracy recorded during the production. IEC 60068-2-64 ISO 16750-3 & 4.1.6.1.6 20 … 2000 Hz Random rms (11g rms) 8h/axis Terminal strength test According to LEM Thermal shocks IEC 60068-214 Na -40 + 125°C 300 cycles Free fall ISO 16750-3 § 4.3 1m concrete ground EMC Test Radiated electronagnetic immunity Directive 2004/104/CE ISO 11452-2 30 V/m 20-2000 MHz Bulk current injection immunity Directive 2004/104/CE ISO 11452-4 1-400 MHz Radiated radio frequency electromagnetic field immunity IEC 61000-4-3 80 MHz to1,000 MHz - 10 V/m Electrostatic discharge immunity test IEC 61000-4-2 Air discharge=2 kV Page 5/5 091008/0 LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice. www.lem.com